Formation of Nanoscale Defects for Enhanced Critical Current Density in TlBaCaCuO Thin Films via Furnace Annealing
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ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...
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تاریخ انتشار 2008